Comparative Study of Various Self-Consistent Event Biasing Schemes for Monte Carlo Simulations of Nanoscale MOSFETs
نویسندگان
چکیده
Semiclassical Boltzmann transport has been the principal theory in the field of modeling and simulation of semiconductor technology since its early development. To date, most commer‐ cial device simulations including the full-band Monte Carlo (FBMC) method are based on the solution of the Boltzmann transport equation (BTE) and its simplified derivatives such as the hydrodynamic (HD) equations and the drift-diffusion (DD) model. The Boltzmann transport equation expresses the global variation of the non-equilibrium distribution func‐ tion, f (r , k , t) , under the influence of various applied and built-in forces. In its most gener‐ al form and for non-parabolic bands the BTE reads:
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